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G. CURRÒ
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Name
Affiliation
Papers
G. CURRÒ
ST Microelectronics Srl, Stradale Primosole, 50, 95100 Catania – Italy
8
Collaborators
Citations
PageRank
16
14
5.69
Referers
Referees
References
27
9
12
Publications (8 rows)
Collaborators (16 rows)
Referers (27 rows)
Referees (9 rows)
Title
Citations
PageRank
Year
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET
2
0.63
2010
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions
0
0.34
2009
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
3
0.84
2008
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate
0
0.34
2007
Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices
0
0.34
2007
Experimental study of power MOSFET’s gate damage in radiation environment
2
0.79
2006
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET
7
2.08
2005
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
0
0.34
2003
1