Name
Abstract | ||
|---|---|---|
We present a 3-D simulation analysis related to an experimental study which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it. During SEB phenomena the generated charge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2005.07.089 | Microelectronics Reliability |
Keywords | Field | DocType |
electric field | Electric field,Power semiconductor device,Power MOSFET,Electric charge,Electronic engineering,Bipolar junction transistor,Gate oxide,Engineering,MOSFET,Ion | Journal |
Volume | Issue | ISSN |
45 | 9 | 0026-2714 |
Citations | PageRank | References |
7 | 2.08 | 2 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Busatto | 1 | 52 | 17.57 |
| A. Porzio | 2 | 14 | 5.02 |
| F. Velardi | 3 | 31 | 12.32 |
| F. Iannuzzo | 4 | 106 | 42.25 |
| A. Sanseverino | 5 | 25 | 11.27 |
| G. Currò | 6 | 14 | 5.69 |