Name
Title | ||
|---|---|---|
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions |
Abstract | ||
|---|---|---|
In this paper we present the results of an experimental work aimed to study the formation of “gate oxide damages” in patterned MOS capacitors during heavy ion irradiation. The samples under test are derived from 100V power MOSFETs. The damages on these structures have the same nature of the corresponding MOSFET but can be much more easily characterized. The gate damages resulting from both 79Br and 197Au ion irradiations are presented for different test conditions. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.microrel.2009.07.012 | Microelectronics Reliability |
Field | DocType | Volume |
Capacitor,Power semiconductor device,Power MOSFET,Irradiation,Electronic engineering,Time-dependent gate oxide breakdown,Gate oxide,Engineering,MOSFET,Ion | Journal | 49 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 3 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Busatto | 1 | 52 | 17.57 |
| G. Currò | 2 | 14 | 5.69 |
| F. Iannuzzo | 3 | 106 | 42.25 |
| A. Porzio | 4 | 14 | 5.02 |
| A. Sanseverino | 5 | 25 | 11.27 |
| F. Velardi | 6 | 31 | 12.32 |