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| 11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology | 2 | 0.38 | 2017 |
| A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. | 0 | 0.34 | 2012 |
| 128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. | 4 | 0.69 | 2012 |
| A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. | 0 | 0.34 | 2008 |
