Charles S. Whitman - Citegraph

Author Info

Name	Affiliation	Papers
CHARLES S. WHITMAN	Corresponding author. Tel.: +1 336 678 8469; fax: +1 336 678 0183.	13
Collaborators	Citations	PageRank
6	8	5.83
Referers	Referees	References
16	5	3

Publications (13 rows)

Collaborators (6 rows)

Referers (16 rows)

Referees (5 rows)

Title	Citations	PageRank	Year
Determination of safe reliability region over temperature and current density for through wafer vias.	0	0.34	2017
Methodology for predicting off-state reliability in GaN power transistors.	0	0.34	2014
Impact of ambient temperature set point deviation on Arrhenius estimates.	0	0.34	2012
Prediction of transmission line lifetimes over temperature and current density	0	0.34	2009
Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method	0	0.34	2008
Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices	1	0.39	2008
Defining the safe operating area for HBTs with an InGaP emitter across temperature and current density	0	0.34	2007
Reliability results of HBTs with an InGaP emitter	0	0.34	2006
Determining factors affecting ESD failure voltage using DOE	3	0.83	2006
Erratum to “Determining factors affecting ESD failure voltage using DOE” [Microelectron. Reliab. 46 (2006) 1228–1237]	0	0.34	2006
Erratum to “Reliability results of HBTs with an InGaP emitter” [Microelectron. Reliab. 46 (2006) 1261–1271]	0	0.34	2006
Determining constant voltage lifetimes for silicon nitride capacitors in a GaAs IC process by a step stress method	2	0.91	2005
Accelerated life test calculations using the method of maximum likelihood: an improvement over least squares	2	0.66	2003

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