Author Info
Name
Affiliation
Papers
E. CANATO
Department of Information Engineering, University of Padova, Padova, Italy
4
Collaborators
Citations 
PageRank 
21
1
1.64
Referers 
Referees 
References 
8
8
1
Title
Citations
PageRank
Year
<tex>$\mu s$</tex>-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate00.342019
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs10.632018
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.00.342018
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.00.342017