Paper Info
Title
<tex>$\mu s$</tex>-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate
Abstract
We propose a technique to evaluate the time-dependence of the threshold voltage instabilities in GaN-based normally-off transistors under positive gate bias. More specifically: (i) for the first time we experimentally evaluate the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift in a wide time window (from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10\ \ \boldsymbol{\mu}\mathbf{s}$</tex> to 100 s), as a function of temperature. (ii) We study the existence of two dominant trapping processes, having different time-kinetics. (iii) a first process, occurring in the initial <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$100\ \ \boldsymbol{\mu}\mathbf{s}$</tex> , leading to a positive threshold voltage shift, and ascribed to the injection of electrons from the 2DEG towards the AlGaN barrier; (iv) a second process, occurring only for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{V}_{\mathbf{GS}}\!&gt;\!5$</tex> V, leading to a negative shift in threshold voltage. This latter process is not thermally activated and strongly dependent on gate leakage.
Year
DOI
Venue
2019
10.1109/IRPS.2019.8720549
2019 IEEE International Reliability Physics Symposium (IRPS)
Keywords
Field
DocType
electron injection,hole injection,p-GaN HEMTs,Vth transient
Analytical chemistry,Engineering,Optoelectronics,Threshold voltage
Conference
ISBN
Citations 
PageRank 
978-1-5386-9504-3
0
0.34
References 
Authors
0
9
Name
Order
Citations
PageRank
E. Canato111.64
F. Masin200.34
Matteo Borga301.01
E. Zanoni4137.01
Matteo Meneghini54530.20
G. Meneghesso65222.83
Arno Stockman700.34
A. Banerjee800.34
P. Moens9118.32