Title
Ultra-wide voltage range designs in fully-depleted silicon-on-insulator FETs
Abstract
Todays' MPSoC applications are requiring a convergence between very high speed and ultra low power. Ultra Wide Voltage Range (UWVR) capability appears as a solution for high energy efficiency with the objective to improve the speed at very low voltage and decrease the power at high speed. Using Fully Depleted Silicon-On-Insulator (FDSOI) devices significantly improves the trade-off between leakage, variability and speed even at low-voltage. A full design framework is presented for UWVR operation using FDSOI Ultra Thin Body and Box technology considering power management, multi-VT enablement, standard cells design and SRAM bitcells. Technology performances are demonstrated on a ARM A9 critical path showing a speed increase from 40% to 200% without added energy cost. In opposite, when performance is not required, FDSOI enables to reduce leakage power up to 10X using Reverse Body Biasing.
Year
DOI
Venue
2013
10.7873/DATE.2013.135
DATE
Keywords
Field
DocType
power management,speed increase,uwvr operation,ultra low power,body biasing,box technology,ultra-wide voltage range design,leakage power,high speed,fully-depleted silicon-on-insulator fets,high energy efficiency,fdsoi ultra thin body,transistors,energy efficiency,low voltage,doping,logic gates
Silicon on insulator,Power management,Leakage (electronics),Computer science,Efficient energy use,Voltage,Static random-access memory,Low voltage,Electrical engineering,Biasing
Conference
ISSN
Citations 
PageRank 
1530-1591
6
0.60
References 
Authors
8
20
Name
Order
Citations
PageRank
Edith Beigne153652.54
Alexandre Valentian211914.94
Bastien Giraud35317.41
Olivier Thomas46011.48
T. Benoist560.60
Yvain Thonnart634932.39
S. Bernard760.60
G. Moritz860.60
Olivier Billoint9338.59
Y. Maneglia1060.60
P. Flatresse1160.60
J. P. Noel1260.60
F. Abouzeid1360.60
B. Pelloux-Prayer1460.60
A. Grover1560.60
S. Clerc1660.60
P. Roche1760.60
J. Le Coz1872.49
S. Engels1960.60
R. Wilson2011512.60