Paper Info
Title
Ultra-Fast and High-Reliability SOT-MRAM: From Cache Replacement to Normally-Off Computing.
Abstract
This paper deals with a new MRAM technology whose writing scheme relies on the Spin Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast switching, a quasi-infinite endurance and improves the reliability by solving the issue of “read disturb”, thanks to separate reading and writing paths. These properties allow introducing SOT at all-levels of the memory hierarchy...
Year
DOI
Venue
2016
10.1109/TMSCS.2015.2509963
IEEE Transactions on Multi-Scale Computing Systems
Keywords
DocType
Volume
Writing,Magnetic tunneling,Magnetization,Switches,Current density,Torque,Magnetic separation
Journal
2
Issue
ISSN
Citations 
1
2332-7766
11
PageRank 
References 
Authors
1.06
6
16
Name
Order
Citations
PageRank
Guillaume Prenat18013.62
Kotb Jabeur2337.43
Pierre Vanhauwaert3111.06
Gregory Di Pendina4337.27
Fabian Oboril528826.71
Rajendra Bishnoi613219.64
Mojtaba Ebrahimi733624.74
Nathalie Lamard8111.06
Olivier Boulle9111.06
Kevin Garello10111.06
Juergen Langer11111.06
Berthold Ocker12111.06
Marie-Claire Cyrille13111.06
Pietro Gambardella14111.06
Mehdi B. Tahoori151537163.44
Gilles Gaudin16111.06