Title | ||
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Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure |
Abstract | ||
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A nonvolatile FPGA (NVFPGA) test chip, where 3000 6-input lookup table (LUT) circuits are embedded, is fabricated under 90nm CMOS/75nm perpendicular magnetic tunnel junction (p-MTJ) technologies. The use of a p-MTJ device makes data-backup-limitation free, which essentially eliminates damage control to nonvolatile storage devices. The use of a p-MTJ device also enables the extension towards dynamically reconfigurable logic paradigm. Since hardware components are shared among all the p-MTJ devices by the use of logic-in-memory structure, the effective area of the 6-input LUT circuit is reduced by 56% compared to that of an SRAM-based one. Moreover, block-level power gating, in which all the idle function blocks are optimally turned off in accordance with the operation mode, can minimize static power consumption of each tile. As a result, the total average power of the proposed NVFPGA is reduced by 81% in comparison with that of an SRAM-based FPGA under typical benchmark-circuit realizations. |
Year | DOI | Venue |
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2015 | 10.1109/VLSIT.2015.7223644 | 2015 Symposium on VLSI Technology (VLSI Technology) |
Keywords | Field | DocType |
nonvolatile FPGA chip,NVFPGA test chip,logic-in-memory structure,lookup table circuits,LUT circuits,CMOS,perpendicular magnetic tunnel junction technologies,p-MTJ technologies,p-MTJ device,nonvolatile storage devices,reconfigurable logic paradigm,block-level power gating,static power consumption,SRAM-based FPGA,size 90 nm,size 75 nm | Lookup table,Computer science,Parallel computing,Field-programmable gate array,Chip,Static random-access memory,CMOS,Electronic engineering,Power gating,Transistor,Low-power electronics,Embedded system | Conference |
ISSN | Citations | PageRank |
0743-1562 | 8 | 0.51 |
References | Authors | |
1 | 11 |
Name | Order | Citations | PageRank |
---|---|---|---|
Daisuke Suzuki | 1 | 47 | 7.32 |
Masanori Natsui | 2 | 80 | 15.10 |
Akira Mochizuki | 3 | 34 | 4.24 |
Sadahiko Miura | 4 | 8 | 0.51 |
Hiroaki Honjo | 5 | 90 | 11.43 |
Sato, H. | 6 | 42 | 11.79 |
Shunsuke Fukami | 7 | 59 | 7.10 |
Shoji Ikeda | 8 | 20 | 1.16 |
Tetsuo Endoh | 9 | 155 | 35.26 |
Hideo Ohno | 10 | 123 | 33.57 |
Takahiro Hanyu | 11 | 441 | 78.58 |