Name
Title | ||
|---|---|---|
A 47.14-$\Mu\Text{W}$ 200-Mhz Mos/Mtj-Hybrid Nonvolatile Microcontroller Unit Embedding Stt-Mram And Fpga For Iot Applications |
Abstract | ||
|---|---|---|
The demand for energy-efficient, high-performance microcontroller units (MCUs) for the use in power-supply-critical Internet-of-Things (IoT) sensor-node applications has witnessed a substantial increase. In response, research concerning the development of several low-power-consuming MCUs has been actively pursued. The performance level of such MCUs, however, has not been sufficient, thereby rendering them non-feasible for the use in IoT sensor-node applications that process a large number of received signals immediately followed by extraction of valuable information from them to limit data transferred to a data center. To realize next-generation IoT systems based on intelligent sensor-node application, ultra-low-power high-performance MCUs need to be developed. This paper presents an ultra-low-power-consuming and high-performance MCU configuration based on the spintronics device technology, using which all modules are non-volatilized, and any wasteful power consumption is eliminated by controlling the power supplied independently to each module. By incorporating a reconfigurable accelerator module, for performing various signal-processing procedures in sensor-node applications, and a memory controller, which can speed up the entire system by relaxing the data-transfer bottleneck of logic and memory, the proposed MCU configuration achieves ultra-low power consumption and high-speed operation. As confirmed by the results obtained via measurements performed on a fabricated chip, the proposed MCU design, on average, consumed 47.14 $\mu \text{W}$ power at an operating frequency of 200 MHz. This corresponds to the world's highest signal-processing performance and energy efficiency of highly functional IoT sensor nodes powered by harvested energy |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/JSSC.2019.2930910 | IEEE JOURNAL OF SOLID-STATE CIRCUITS |
Keywords | DocType | Volume |
Nonvolatile memory, Spintronics, Performance evaluation, Magnetic tunneling, Central Processing Unit, Memory management, Standards, Energy harvesting, field-programmable gate arrays, Internet of Things, magnetic tunnel junction, microcontroller unit (MCU), spin-transfer-torque magnetoresistive random access memory (STT-MRAM) | Journal | 54 |
Issue | ISSN | Citations |
11 | 0018-9200 | 0 |
PageRank | References | Authors |
0.34 | 0 | 16 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masanori Natsui | 1 | 80 | 15.10 |
| Daisuke Suzuki | 2 | 47 | 7.32 |
| Akira Tamakoshi | 3 | 10 | 2.46 |
| Toshinari Watanabe | 4 | 1 | 1.10 |
| Hiroaki Honjo | 5 | 90 | 11.43 |
| Hiroki Koike | 6 | 25 | 3.90 |
| Takashi Nasuno | 7 | 1 | 1.10 |
| Yitao Ma | 8 | 10 | 3.29 |
| Takaho Tanigawa | 9 | 1 | 1.10 |
| Yasuo Noguchi | 10 | 1 | 1.10 |
| Mitsuo Yasuhira | 11 | 1 | 1.10 |
| Sato, H. | 12 | 42 | 11.79 |
| Ikeda, S. | 13 | 36 | 5.83 |
| Hideo Ohno | 14 | 123 | 33.57 |
| Tetsuo Endoh | 15 | 155 | 35.26 |
| Takahiro Hanyu | 16 | 441 | 78.58 |