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ANUJ GROVER
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Name
Affiliation
Papers
ANUJ GROVER
STMicroelectronics, Greater Noida, India
17
Collaborators
Citations
PageRank
63
10
6.49
Referers
Referees
References
39
288
84
Search Limit
100
288
Publications (17 rows)
Collaborators (63 rows)
Referers (39 rows)
Referees (100 rows)
Title
Citations
PageRank
Year
ChaCha20-in-Memory for Side-Channel Resistance in IoT Edge-Node Devices
1
0.39
2021
A 81nW Error Amplifier Design for Ultra Low Leakage Retention Mode Operation of 4Mb SRAM Array in 40nm LSTP Technology
0
0.34
2018
A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS.
2
0.40
2017
Comparison of SRAM Cell Layout Topologies to Estimate Improvement in SER Robustness in 28FDSOI and 40 nm Technologies.
0
0.34
2017
LoCCo-Based Scan Chain Stitching for Low-Power DFT.
1
0.36
2017
Scan Chain Adaptation through ECO.
0
0.34
2016
Heterogeneous memory assembly exploration using a floorplan and interconnect aware framework
0
0.34
2016
A New Sense Amplifier Topology with Improved Performance for High Speed SRAM Applications
0
0.34
2016
New stable loadless 6T dual-port SRAM cell design
0
0.34
2016
Static Noise Margin based Yield Modelling of 6T SRAM for Area and Minimum Operating Voltage Improvement using Recovery Techniques.
0
0.34
2016
An effective test methodology enabling detection of weak bits in SRAMs: Case study in 28nm FDSOI
0
0.34
2016
A method to estimate effectiveness of weak bit test: Comparison of weak pMOS and WL boost based test - 28nm FDSOI implementation
0
0.34
2016
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs
1
0.38
2015
Floorplan and congestion aware framework for optimal SRAM selection for memory subsystems
1
0.38
2015
Statistical Analysis of 64Mb SRAM for Optimizing Yield and Write Performance
1
0.39
2015
27.1 A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding F MAX tracking
0
0.34
2014
Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology
3
0.83
2013
1