Robert Giterman - Citegraph

Author Info

Name	Affiliation	Papers
ROBERT GITERMAN	Ben Gurion Univ Negev, VLSI Syst Ctr, IL-84105 Beer Sheva, Israel	24
Collaborators	Citations	PageRank
37	40	9.55
Referers	Referees	References
78	155	66

Search Limit

100155

Publications (24 rows)

Collaborators (37 rows)

Referers (78 rows)

Referees (100 rows)

Title	Citations	PageRank	Year
Gain-Cell Embedded DRAMs: Modeling and Design Space	0	0.34	2020
Lupulus: A Flexible Hardware Accelerator for Neural Networks	0	0.34	2020
GC-eDRAM with Body-Bias Compensated Readout and Error Detection in 28nm FD-SOI	0	0.34	2020
Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space	0	0.34	2020
Gain-Cell Embedded DRAMs: Modeling and Design Space	0	0.34	2020
Improved Read Access in GC-eDRAM Memory by Dual-Negative Word-Line Technique	0	0.34	2020
A 7T Security Oriented SRAM Bitcell	0	0.34	2019
GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI.	0	0.34	2019
Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection.	0	0.34	2019
Power Analysis Resilient SRAM Design Implemented with a 1% Area Overhead Impedance Randomization Unit for Security Applications	0	0.34	2019
A 24 kb Single-Well Mixed 3T Gain-Cell eDRAM with Body-Bias in 28 nm FD-SOI for Refresh-Free DSP Applications	0	0.34	2019
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI.	4	0.58	2018
Leakage Power Attack-Resilient Symmetrical 8T SRAM Cell.	1	0.41	2018
Gain-Cell Embedded DRAM-Based Physical Unclonable Function.	0	0.34	2018
An 800-MHz Mixed- VT 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applications.	0	0.34	2018
An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications.	0	0.34	2017
Ultra miniature offset cancelled bandgap reference with ±0.534% inaccuracy from -10°C to 110°C.	0	0.34	2017
Area and Energy-Efficient Complementary Dual-Modular Redundancy Dynamic Memory for Space Applications	1	0.36	2017
Hybrid GC-eDRAM/SRAM Bitcell for Robust Low-Power Operation.	0	0.34	2017
Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications	6	0.59	2016
A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications.	2	0.41	2016
Approximate computing with unreliable dynamic memories	6	0.46	2015
Energy versus data integrity trade-offs in embedded high-density logic compatible dynamic memories	9	0.57	2015
Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM.	11	0.77	2014